Integrated circuit device

ABSTRACT

An integrally packaged optronic integrated circuit device ( 310 ) including an integrated circuit die ( 322 ) containing at least one of a radiation emitter and radiation receiver and having top and bottom surfaces formed of electrically insulative and mechanically protective material, at least one of the surfaces ( 317 ) being transparent to radiation, and electrically insulative edge surfaces ( 314 ) having pads.

This application is a continuation of patent application Ser. No.09/601,895 filed on Sep. 22, 2000, now U.S. Pat. No. 6,646,289 which isa 371 of International Application PCT/IL99/00071, filed on 3 Feb. 1999,and which has designated the U.S., which claims priority to IsraeliPatent Application No. 123207 filed Feb. 6, 1998.

FIELD OF THE INVENTION

The present invention relates to methods and apparatus for producingintegrated circuit devices and to integrated circuit devices producedthereby and more particularly to an optronic integrally packaged die.

BACKGROUND OF THE INVENTION

An essential step in the manufacture of all integrated circuit devicesis known as “packaging” and involves mechanical and environmentalprotection of a silicon chip which is at the heart of the integratedcircuit as well as electrical interconnection between predeterminedlocations on the silicon chip and external electrical terminals.

At present three principal technologies are employed for packagingsemiconductors: wire bonding, tape automatic bonding (TAB) and flipchip.

Wire bonding employs heat and ultrasonic energy to weld gold bondingwires between bond pads on the chip and contacts on the package.

Tape automatic bonding (TAB) employs a copper foil tape instead ofbonding wire. The copper foil tape is configured for each specific dieand package combination and includes a pattern of copper traces suitedthereto. The individual leads may be connected individually or as agroup to the various bond pads on the chip.

Flip chips are integrated circuit dies which have solder bumps formed ontop of the bonding pads, thus allowing the die to be “flipped” circuitside down and directly soldered to a substrate. Wire bonds are notrequired and considerable savings in package spacing may be realized.

The above-described technologies each have certain limitations. Bothwire bonding and TAB bonding are prone to bad bond formation and subjectthe die to relatively high temperatures and mechanical pressures. Bothwire bond and TAB technologies are problematic from a package sizeviewpoint, producing integrated circuit devices having a die-to-packagearea ratio ranging from about 10% to 60%.

The flip-chip does not provide packaging but rather onlyinterconnection. The interconnection encounters problems of uniformityin the solder bumps as well as in thermal expansion mismatching, whichlimits the use of available substrates to silicon or materials whichhave thermal expansion characteristics similar to those of silicon.

Optronic packages for semiconductors are known. Conventional optronicpackages used for imaging employ a ceramic housing onto which issealingly mounted a transparent window. Optronic packages used for lowlevel imaging, light emission and radiation detection, including lightdetection, employ a clear plastic enclosure.

Described in applicant's published PCT Application WO 95/19645 aremethods and apparatus for producing integrated circuit devices,including, inter alia, integrally packaged dies having a radiationtransparent protective layer.

SUMMARY OF THE INVENTION

The present invention seeks to provide optronic integrated circuitdevices which are extremely compact as well as apparatus and techniquesfor the production thereof.

There is thus provided in accordance with a preferred embodiment of thepresent invention an integrally packaged optronic integrated circuitdevice including:

an integrated circuit die containing at least one of a radiation emitterand radiation receiver and having top and bottom surfaces formed ofelectrically insulative and mechanically protective material, at leastone of the surfaces being transparent to radiation, and electricallyinsulative edge surfaces having pads.

Preferably, the device also includes at least one spectral filterassociated with a radiation transparent protective surface thereof.

Additionally in accordance with a preferred embodiment of the presentinvention, the device includes a semiconductor substrate which issufficiently thin as to enable to device to be responsive to backillumination.

Preferably, the device also includes at least one color filterassociated with a radiation transparent protective surface thereof.

Further in accordance with a preferred embodiment of the presentinvention, lenses may be integrally formed on a transparent protectivesurface of the device.

Additionally in accordance with a preferred embodiment of the presentinvention, light coupling bumps may be integrally formed on atransparent protective surface of the device.

Further in accordance with a preferred embodiment of the presentinvention a waveguide and other optical components integrally formed ona transparent protective surface of the device.

Additionally in accordance with a preferred embodiment of the presentinvention, an optical grating may be integrally formed on a transparentprotective surface of the device.

Further in accordance with a preferred embodiment of the presentinvention a polarizer may be formed on a transparent protective surfaceof the device.

There is also provided in accordance with a preferred embodiment of thepresent invention an integrally packaged optronic integrated circuitdevice including:

an integrated circuit die containing at least one of a radiation emitterand radiation receiver and having top and bottom surfaces formed ofelectrically insulative and mechanically protective material, at leastone of the surfaces being transparent to radiation, the integrallypackaged optronic integrated circuit device being characterized in thatits longest dimension does not exceed the longest dimension of the dieby more than 20%. Preferably the integrally packaged optronic integratedcircuit device is characterized in that its longest dimension does notexceed the longest dimension of the die by more than 10%. Morepreferably the integrally packaged optronic integrated circuit device ischaracterized in that its longest dimension does not exceed the longestdimension of the die by more than 5%.

There is also provided in accordance with a preferred embodiment of thepresent invention a method for producing an integrally packaged optronicintegrated circuit device comprising the steps of:

forming electrical circuits onto a semiconductor wafer;

forming at least one transparent mechanical protective layer onto saidsemiconductor wafer over said electrical circuits;

forming solderable contacts onto said semiconductor wafer; and

thereafter, dicing said wafer into individual packaged dies.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be understood and appreciated more fully fromthe following detailed description, taken in conjunction with thedrawings in which:

FIGS. 1A and 1B are respective top view and bottom view simplifiedpictorial illustrations of an integrally packaged optronic integratedcircuit device constructed and operative in accordance with a preferredembodiment of the present invention;

FIG. 1C is a bottom view simplified pictorial illustration of anintegrally packaged optronic integrated circuit device of the type shownin FIGS. 1A and 1B, constructed and operative in accordance with anotherpreferred embodiment of the present invention;

FIG. 2 is a simplified pictorial illustration of the attachment of atransparent protective packaging layer to a wafer containing a pluralityof integrated circuit dies;

FIG. 3 is a simplified pictorial illustration of showing the individualdies on the wafer as seen through the transparent protective packaginglayer attached thereto;

FIGS. 4A, 4B, 4C and 4D are sectional illustrations of various stages inthe manufacture of integrally packaged optronic integrated circuitdevices in accordance with a preferred embodiment of the presentinvention;

FIG. 5 is a partially cut away detailed pictorial illustration of anintegrally packaged optronic integrated circuit device produced from thewafer of FIG. 4D;

FIGS. 6, 7A, 7B, 8A and 8B are sectional illustrations of various stagesin the manufacture of the integrally packaged optronic integratedcircuit device shown in FIGS. 1A, 1B, 1C & 5;

FIGS. 9, 10A and 10B together provide a simplified block diagramillustration of apparatus for carrying out the method of the presentinvention;

FIGS. 11A, 11B, 11C, 11D and 11E are simplified pictorial illustrationsof five alternative embodiments of an integrated circuit deviceconstructed and operative in accordance with yet another preferredembodiment of the present invention and including spectral filtersand/or anti-reflective coatings;

FIGS. 12A, 12B and 12C are simplified pictorial illustrations of threealternative embodiments of an integrally packaged optronic integratedcircuit device which is designed for back illumination;

FIGS. 13A, 13B and 13C are simplified pictorial illustrations of threealternative embodiments of an integrally packaged optronic integratedcircuit device constructed and operative in accordance with stillanother preferred embodiment of the present invention wherein colorarray filters are integrated with the integrally packaged optronicintegrated circuit device;

FIGS. 14A, 14B, 14C and 14D are simplified pictorial illustrations offour alternative embodiments of an integrally packaged optronicintegrated circuit device constructed and operative in accordance withanother preferred embodiment of the present invention having lensesintegrally formed on a transparent protective surface thereof;

FIGS. 15A and 15B are simplified pictorial illustrations of twoalternative embodiments of an integrally packaged optronic integratedcircuit device constructed and operative in accordance with anotherpreferred embodiment of the present invention having light couplingbumps integrally formed on a transparent protective surface thereof;

FIGS. 16A and 16B are simplified pictorial illustrations of twoalternative embodiments of an integrally packaged optronic integratedcircuit device constructed and operative in accordance with yet anotherpreferred embodiment of the present invention having a waveguide andother optical components integrally formed on a transparent protectivesurface thereof;

FIGS. 17A and 17B are simplified pictorial illustrations of twoalternative embodiments of an integrally packaged optronic integratedcircuit device constructed and operative in accordance with stillanother preferred embodiment of the present invention wherein apolarizer is integrated with the integrally packaged optronic integratedcircuit device;

FIGS. 18A and 18B are simplified pictorial illustrations of twoalternative embodiments of an integrally packaged optronic integratedcircuit device constructed and operative in accordance with stillanother preferred embodiment of the present invention wherein an opticalgrating is integrated with the integrally packaged optronic integratedcircuit device.

FIGS. 19A and 19B are simplified pictorial illustrations of twoalternative embodiments of an integrally packaged optronic integratedcircuit device constructed and operative in accordance with yet anotherpreferred embodiment of the present invention wherein the package isformed with a desired geometrical configuration;

FIGS. 20A and 20B are simplified pictorial illustrations of twoalternative embodiments of an integrally packaged optronic integratedcircuit device constructed and operative in accordance with yet anotherpreferred embodiment of the present invention wherein edges of thepackage are coated with an opaque coating;

FIG. 21 is a simplified pictorial illustration of an integrally packagedoptronic integrated circuit device constructed and operative inaccordance with still another preferred embodiment of the presentinvention and having an octagonal configuration; and

FIG. 22 is a simplified pictorial illustration of a cutting patternemployed to produce integrated circuits of the type shown in FIG. 21.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Reference is now made to FIGS. 1A–22, which illustrate the production ofintegrated circuit devices in accordance with a preferred embodiment ofthe present invention.

FIGS. 1A and 1B together illustrate a preferred embodiment of integratedcircuit device constructed and operative in accordance with a preferredembodiment of the present invention. The integrated circuit deviceincludes a relatively thin and compact, environmentally protected andmechanically strengthened integrated circuit package 10 having amultiplicity of electrical contacts 12 plated along the edge surfaces 14thereof.

In accordance with a preferred embodiment of the invention, contacts 12extend over edge surfaces onto the planar surfaces 16 of the, package.This contact arrangement permits both flat surface mounting and edgemounting of package 10 onto a circuit board. It is noted that theintegrated circuit package 10 may include one or more of the followingelements (not shown): an integrally formed dichroic filter, colorfilter, antireflective coating, polarizer, optical grating, integratedwave guide and optical coupling bumps.

FIG. 1C illustrates an alternative embodiment of the present inventionwherein solderable bumps 17 are provided at the ends of each contact 12.Preferably, the solderable bumps 17 are arranged in a predeterminedarray.

In accordance with a preferred embodiment of the present invention, andas illustrated in FIG. 2 and FIG. 4A, a complete silicon wafer 20 havinga plurality of finished dies 22 formed thereon by conventionaltechniques, is bonded at its active surface 24 to a radiationtransparent protective insulating cover plate 26 via a layer 28 ofepoxy. The insulating cover plate 26 typically comprises glass, quartz,sapphire or any other suitable radiation transparent insulativesubstrate.

The cover plate 26 may be colored or tinted in order to operate as aspectral filter. Alternatively, a dichroic or colored spectral filtermay be formed on at least one surface of the cover plate 26.

It is a particular feature of the present invention that cover plate 26and epoxy layer 28 are preferably transparent to radiation in a spectralregion useful for optronic applications.

It is appreciated that certain steps in the conventional fabrication ofsilicon wafer 20 may be eliminated when the wafer is used in accordancewith the present invention. These steps include the provision of viaopenings above pads, wafer back grinding and wafer back metal coating.

The complete silicon wafer 20 may be formed with an integral colorfilter array by conventional lithography techniques at any suitablelocation therein. Prior to the bonding step of FIG. 4A, a filter may beformed and configured by conventional techniques over the cover plate26, such that the filter plane lies between cover plate 26 and the epoxylayer 28.

Following the bonding step described hereinabove, the silicon wafer ispreferably ground down to a decreased thickness, typically 100 microns,as shown in FIG. 4B. This reduction in wafer thickness is enabled by theadditional mechanical strength provided by the bonding thereof of theinsulating cover plate 26.

Following the reduction in thickness of the wafer, which is optional,the wafer is etched, using a photolithography process, along its backsurface along predetermined dice lines which separate the individualdies. Etched channels 30 are thus produced, which extend entirelythrough the thickness of the silicon substrate, typically 100 microns.The etched wafer is shown in FIG. 4C.

The aforementioned etching typically takes place in conventional siliconetching solution, such as a combination of 2.5% hydrofluoric acid, 50%nitric acid, 10% acetic acid and 37.5% water, so as to etch the silicondown to the field oxide layer, as shown in FIG. 4C.

The result of the silicon etching is a plurality of separated dies 40,each of which includes silicon of thickness about 100 microns.

As seen in FIG. 4D, following the silicon etching, a second insulatingpackaging layer 42 is bonded over the dies 40 on the side thereofopposite to insulating packaging layer 26. A layer 44 of epoxy liesbetween the dies 40 and the layer 42 and epoxy also fills theinterstices between dies 40. In certain applications, such as theembodiment of FIGS. 12A–12C, the packaging layer 42 and the epoxy layer44 are both transparent.

The sandwich of the etched wafer 20 and the first and second insulatingpackaging layers 26 and 42 is then partially cut along lines 50, lyingalong the interstices between adjacent dies 40 to define notches alongthe outlines of a plurality of pre-packaged integrated circuits. It is aparticular feature of the invention that lines 50 are selected such thatthe edges of the dies along the notches are distanced from the outerextent of the silicon 40 by at least a distance d, as shown in FIGS. 4Dand 5, to which reference is now additionally made.

It is a particular feature of the present invention that partial cuttingof the sandwich of FIG. 4D along lines 50 exposes edges of amultiplicity of pads 34 on the wafer 20, which pad edges, when soexposed, define contact surfaces 51 on dies 40.

Referring now particularly to FIG. 5, at least one insulating layer,including the field oxide layer, is shown at reference numeral 32 andmetal pads are shown at reference numeral 34. An over-metal insulatinglayer is shown at reference numeral 36. The color filter plane is shownat reference numeral 38.

Reference is now made to FIGS. 6, 7A, 7B, 8A and 8B, which illustratefurther steps in the manufacture of integrated circuit devices inaccordance with a preferred embodiment of the present invention.

FIG. 6 illustrates at reference numeral 54, a preferred cross sectionalconfiguration of a notch produced by partially cutting as describedhereinabove in connection with FIG. 5. Vertical lines 56 indicate theintersection of the notch 54 with the pads 34, defining exposedsectional pad surfaces 51. Vertical lines 58 indicate the location of asubsequent final cut which separates the dies into individual integratedcircuits at a later stage.

FIGS. 7A and 7B illustrate the formation of metal contacts 12 along theinclined edges 14 and part of the top surface 16. These contacts, whichmay be formed by any suitable metal deposition technique, are seen toextend inside notch 54, thus establishing electrical contact withsurfaces 51 of pads 34. FIG. 7A shows a configuration corresponding tothat of FIGS. 1A and 1B without solderable bumps, while FIG. 7B showsthe provision of solderable bumps 17 on contacts 12, as illustrated inFIG. 1C.

It is a particular feature of the present invention that metal contactsare formed onto the dies in electrical contact with surfaces 51 of pads34 without first separating the dies into individual chips.

FIGS. 8A and 8B illustrate subsequent dicing of the individual dies onthe wafer, subsequent to metal contact formation thereon, intoindividual pre-packaged integrated circuit devices. FIG. 8A shows aconfiguration corresponding to that of FIGS. 1A and 1B withoutsolderable bumps, while FIG. 8B shows the provision of solderable bumps17 on contacts 12, as illustrated in FIG. 1C.

Reference is now made to FIGS. 9, 10A and 10B, which together illustrateapparatus for producing integrated circuit devices in accordance with apreferred embodiment of the present invention. A conventional waferfabrication facility 180 provides complete wafers 20. Individual wafers20 are bonded on their active surfaces to protective layers, such asglass layers 26, using epoxy 28, by bonding apparatus 182, preferablyhaving facilities for rotation of the wafer 20, the layer 26 and theepoxy 28 so as to obtain even distribution of the epoxy.

The bonded wafer (FIG. 3) is thinned at its non-active surface as bygrinding apparatus 184, such as Model 32BTGW using 12.5A abrasive, whichis commercially available from Speedfam Machines Co. Ltd. of England.

The wafer is then-etched at its non-active surface, preferably byphotolithography, such as by using conventional spin-coated photoresist,which is commercially available from Hoechst, under the branddesignation AZ 4562.

The photoresist is preferably mask exposed by a suitable UV exposuresystem 185, such as a Karl Suss Model KSMA6, through a lithography mask186 to define etched channels 30.

The photoresist is then developed in a development bath (not shown),baked and then etched in a silicon etch solution 190 located in atemperature controlled bath 188. Commercially available equipment forthis purpose include a Chemkleen bath and an WHRV circulator both ofwhich are manufactured by Wafab Inc. of the U.S.A. A suitableconventional silicon etching solution is Isoform Silicon etch, which iscommercially available from Micro-Image Technology Ltd. of England. Thewafer is conventionally rinsed after etching. The resulting etched waferis shown in FIG. 4C.

Alternatively, the foregoing wet chemical etching step may be replacedby dry plasma etching.

The etched wafer is bonded on the non-active side to another protectivelayer 42 by bonding apparatus 192, which may be essentially the same asapparatus 182, to produce a doubly bonded wafer sandwich as shown inFIG. 4D.

Notching apparatus 194 partially cuts the bonded wafer sandwich of FIG.4D to a configuration shown in FIG. 5.

The notched wafer is then subjected to anticorrosion treatment in a bath196, containing a chromating solution 198, such as described in any ofthe following U.S. Pat. Nos. 2,501,956; 2,851,385 and 2,796,370, thedisclosure of which is hereby incorporated by reference.

Conductive layer deposition apparatus 200, which operates by vacuumdeposition techniques, such as a Model 903M sputtering machinemanufactured by Material Research corporation of the U.S.A., is employedto produce a conductive layer on one or more surfaces of each die of thewafer as shown in FIG. 7.

Configuration of contact strips, as shown in FIG. 7, is carried outpreferably by using conventional electro-deposited photoresist, which iscommercially available from DuPont under the brand name Primecoat orfrom Shipley, under the brand name Eagle. The photoresist is applied tothe wafers in a photoresist bath assembly 202 which is commerciallyavailable from DuPont or Shipley.

The photoresist is preferably light configured by a UV exposure system204, which may be identical to system 185, using a mask 205 to definesuitable etching patterns. The photoresist is then developed in adevelopment bath 206, and then etched in a metal etch solution 208located in an etching bath 210, thus providing a conductor configurationsuch as that shown in FIGS. 1A and 1B.

The exposed conductive strips shown in FIG. 7 are then plated,preferably by electroless plating apparatus 212, which is commerciallyavailable from Okuno of Japan.

The wafer is then diced into individual prepackaged integrated circuitdevices. Preferably the dicing blade 214 should be a diamond resinoidblade of thickness 4–12 mils. The resulting dies appear as illustratedgenerally in FIGS. 1A and 1B.

FIG. 10A shows apparatus for producing an integrated circuitconfiguration corresponding to that of FIGS. 1A and 1B withoutsolderable bumps, while FIG. 10B shows apparatus for producing anintegrated circuit configuration corresponding to that of FIG. 1C havingsolderable bumps. The embodiment of FIG. 10B is identical to that ofFIG. 10A, apart from the additional provision of bump forming apparatus213 downstream of the electroless plating apparatus 212.

Reference is now made to FIGS. 11A–11E, which illustrate fivealternative preferred embodiments of integrated circuit deviceconstructed and operative in accordance with another preferredembodiment of the present invention and includes a relatively thin andcompact, environmentally protected and mechanically strengthenedintegrated circuit package 310 having a multiplicity of electricalcontacts 312 plated along the edge surfaces 314 thereof.

FIG. 11A shows a dichroic filter and/or antireflective coating 315formed on an outer facing surface 316 of a transparent protective layer317. FIG. 11B illustrates a coating 318, which may be identical tocoating 315, which is formed on an inner facing surface 319 oftransparent protective layer 317. FIG. 11C shows both coatings 315 and318 on respective surfaces 316 and 319 of transparent protective layer317. Optronic components are formed on a surface 320 of a siliconsubstrate 322 of conventional thickness, typically 100 microns. Surface320 faces transparent protective layer 317.

FIG. 11D shows an absorption filter 323 formed on outer facing surface316 of transparent protective layer 317. FIG. 11E shows an absorptionfilter 323, having formed thereon an anti-reflective coating 324, formedon outer facing surface 316 of transparent protective layer 317.

Reference is now made to FIGS. 12A–12C, which illustrate threealternative preferred embodiments of integrated circuit device whichinclude a relatively thin and compact, environmentally protected andmechanically strengthened integrated circuit package 330 having amultiplicity of electrical contacts 332 plated along the edge surfaces334 thereof.

In contrast to the embodiments of FIGS. 11A–11E, the integrated circuitdevices of FIGS. 12A–12C are designed for back illumination andtherefore employ a thinned silicon substrate 336, typically having athickness of 12–15 microns.

Whereas in the embodiment of FIGS. 11A–11E, the optronic components areformed on a surface 320 which faces a transparent protective layer 317,in the embodiment of FIGS. 12A–12B, the components may be formed on asurface 340 of substrate 336, which surface 340 faces away from thecorresponding transparent protective layer 337. The extreme thickness ofthe substrate 336 in the embodiments of FIGS. 12A–12C enables theoptronic components on surface 340 to be exposed to light impinging viatransparent protective layer 337 by back exposure.

It is appreciated that silicon is transparent to certain radiationspectra, such as IR radiation. When an IR responsive device is provided,the embodiment of FIGS. 12A–12C can be constructed without a thinnedsilicon substrate.

FIG. 12A shows a dichroic filter and/or antireflective coating 345formed on an outer facing surface 346 of the transparent protectivelayer 337. FIG. 12B illustrates a coating 348, which may be identical tocoating 345, which is formed on an inner facing surface 349 oftransparent protective layer 337. FIG. 12C shows both coatings 345 and348 on respective surfaces 346 and 349 of transparent protective layer337.

The modifications shown in FIGS. 11D and 11E may also be embodied in theconfiguration of FIGS. 12A–12C.

Reference is now made to FIGS. 13A, 13B and 13C, which illustrate threealternative preferred embodiments of integrated circuit deviceconstructed and operative in accordance with another preferredembodiment of the present invention and includes a relatively thin andcompact, environmentally protected and mechanically strengthenedintegrated circuit package 350 having a multiplicity of electricalcontacts 352 plated along the edge surfaces 354 thereof.

FIG. 13A shows a color filter, such as an RGB or masking filter, 355formed on an outer facing surface 356 of a transparent protective layer357. FIG. 13B illustrates a filter 358, which may be identical to filter355, which is formed on an outer facing surface 359 of a siliconsubstrate 362. FIG. 13C shows both filters 355 and 358 on respectivesurfaces 356 and 359.

It is appreciated that filter 356 may alternatively be located on aninner facing surface of transparent protective layer 357.

Reference is now made to FIGS. 14A, 14B, 14C and 14D, which illustratefour alternative embodiments of an integrally packaged optronicintegrated circuit device constructed and operative in accordance withanother preferred embodiment of the present invention having lensesintegrally formed on a transparent protective surface thereof.

The embodiment of FIG. 14A may be identical to that of FIG. 11A withoutthe coating and is further distinguished therefrom in that it has atransparent protective layer 370 which is formed with an array ofmicrolenses 372 on an outer facing surface 374 thereof.

The embodiment of FIG. 14B may be identical to that of FIG. 12A withoutthe coating and is further distinguished therefrom in that it has atransparent protective layer 380 which is formed with an array ofmicrolenses 382 on an outer facing surface 384 thereof.

In the illustrated embodiment of FIGS. 14A and 14B, the microlenses 372and 382 respectively are formed of the same material as than oftransparent protective layers 370 and 380 respectively. Alternatively,microlenses 372 and 382 may be formed of a material different from thatof respective transparent protective layers 370 and 380.

The embodiment of FIG. 14C corresponds to that of FIG. 14A. However inthe embodiment of FIG. 14C, an array of microlenses 385 is formed on aninner facing surface of transparent protective layer 370. In theillustrated embodiment of FIG. 14C, the microlenses 385 are formed of adifferent material than of transparent protective layer 370.Alternatively, microlenses 385 may be formed of the same material asthat of transparent protective layer 370.

The embodiment of FIG. 14D corresponds to that of FIG. 14B. However inthe embodiment of FIG. 14D, similarly to the embodiment of FIG. 14C, anarray of microlenses 387 is formed on an inner facing surface oftransparent protective layer 380. In the illustrated embodiment of FIG.14D, the microlenses 387 are formed of a different material than oftransparent protective layer 380. Alternatively, microlenses 387 may beformed of the same material as that of transparent protective layer 380.

In the embodiments of FIGS. 14C and 14D, the index of refraction of themicrolenses 385 and 387 respectively must exceed that of an epoxy layer388 underlying them.

Reference is now made to FIGS. 15A and 15B, which are simplifiedpictorial illustrations of two alternative embodiments of an integrallypackaged optronic integrated circuit device constructed and operative inaccordance with another preferred embodiment of the present inventionhaving light coupling bumps integrally formed on a transparentprotective surface thereof.

The embodiment of FIG. 15A may be identical to that of FIG. 11A withoutthe coating and is further distinguished therefrom in that it has alight coupling bump 390 formed on a transparent protective layer 392. Awaveguide 394 is shown optically coupled to the transparent protectivelayer 392 via bump 390. Preferably the bump 390 is formed of atransparent organic material which is somewhat compliant such thatmechanical pressure produces a slight deformation thereof and enables anevanescent light wave to pass through an interface defined therewith.

The embodiment of FIG. 15B may be identical to that of FIG. 12A withoutthe coating and is further distinguished therefrom in that it has alight coupling bump 396 formed on a transparent protective layer 398. Awaveguide 399 is shown optically coupled to the transparent protectivelayer 398 via bump 396.

Reference is now made to FIGS. 16A and 16B which are simplifiedpictorial illustrations of two alternative embodiments of an integrallypackaged optronic integrated circuit device constructed and operative inaccordance with yet another preferred embodiment of the presentinvention having a waveguide and other optical components integrallyformed on a transparent protective surface thereof.

The embodiment of FIG. 16A may be identical to that of FIG. 11A withoutthe coating and is further distinguished therefrom in that it has a waveguide 400 and possibly other optical elements (not shown) formed on atransparent protective layer 402, as by conventional integrated opticstechniques. This arrangement enables optical communication between anoptronic component formed on a silicon substrate 404 via the transparentprotective layer 402 and the wave guide 400.

The embodiment of FIG. 16B may be identical to that of FIG. 12A withoutthe coating and is further distinguished therefrom in that it has a waveguide 410 and possibly other optical elements (not shown) formed on atransparent protective layer 412, as by conventional integrated opticstechniques. This arrangement enables optical communication between anoptronic component formed on a silicon substrate 414 via the transparentprotective layer 412 and the wave guide 410.

Reference is now made to FIGS. 17A and 17B, which are simplifiedpictorial illustrations of two alternative embodiments of an integrallypackaged optronic integrated circuit device constructed and operative inaccordance with still another preferred embodiment of the presentinvention wherein a polarizer is integrated with the integrally packagedoptronic integrated circuit device.

The embodiment of FIG. 17A may be identical to that of FIG. 11A withoutthe coating and is further distinguished therefrom in that it has apolarizer 420 which is on an outer facing surface 422 of a transparentprotective layer 424.

The embodiment of FIG. 17B may be identical to that of FIG. 12A withoutthe coating and is further distinguished therefrom in that it has apolarizer 430 which is on an outer facing surface 432 of a transparentprotective layer 434.

Reference is now made to FIGS. 18A and 18B, which are simplifiedpictorial illustrations of two alternative embodiments of an integrallypackaged optronic integrated circuit device constructed and operative inaccordance with still another preferred embodiment of the presentinvention wherein an optical grating is integrated with the integrallypackaged optronic integrated circuit device.

The embodiment of FIG. 18A may be identical to that of FIG. 11A withoutthe coating and is further distinguished therefrom in that it has atransparent protective layer 440 which is formed with an optical grating442 on an outer facing surface 444 thereof.

The embodiment of FIG. 18B may be identical to that of FIG. 12A withoutthe coating and is further distinguished therefrom in that it has atransparent protective layer 450 which is formed with an optical grating452 on an outer facing surface 454 thereof.

Reference is now made to FIGS. 19A and 19B which may be generallysimilar in all relevant respects to respective FIGS. 11A and 12Arespectively. The embodiment of FIGS. 19A and 19B is characterized inthat a transparent protective layer 460 is provided with a particularedge configuration, preferably to enable it to be located in anaperture. In FIGS. 19A and 19B, the transparent protective layer 460 isshown with a peripheral edge defining a step 462. It is appreciated thatany other suitable configuration may also be provided for thetransparent protective layer 460.

Reference is now made to FIGS. 20A and 20B, which are simplifiedpictorial illustrations of two alternative embodiments of an integrallypackaged optronic integrated circuit device constructed and operative inaccordance with yet another preferred embodiment of the presentinvention wherein edges of the package are coated with an opaquecoating.

The embodiment of FIG. 20A may correspond to that of FIG. 19A whereinthe transparent protective layer 460 may be provided with an opaquecoating 464 at its peripheral edge which may cover step 462 and may alsocover the edge of the outer facing surface adjacent thereto.

The embodiment of FIG. 20B may correspond generally to that of FIG. 11Awherein a transparent protective layer 470 may be provided with anopaque coating 472 at its peripheral edge which may also cover the edgeof the outer facing surface adjacent thereto.

Reference is now made to FIG. 21, which is a simplified pictorialillustration of an integrally packaged optronic integrated circuitdevice constructed and operative in accordance with still anotherpreferred embodiment of the present invention and having an octagonalconfiguration. This configuration is preferred for compact applications,such as endoscopes which a high density of focal plane sensors andelectronics is required.

FIG. 22 is a simplified pictorial illustration of a cutting patternemployed to produce integrated circuits of the type shown in FIG. 21.The cutting pattern of FIG. 22, which is shown overlaid on a wafer 480,comprises six consecutive cuts for each die.

It will be appreciated by persons skilled in the art that the presentinvention is not limited to what has been particularly shown anddescribed hereinabove. Rather the scope of the present inventionincludes both combinations and subcombinations of the various featuresdescribed hereinabove as well as modifications and variations thereof aswould occur to a person of skill in the art upon reading the foregoingspecification and which are not in the prior art.

1. A packaged optronic integrated circuit device including: anintegrated circuit die containing at least one of a radiation emitterand radiation receiver, said integrated circuit die having formedthereon at least one mechanical protective layer, comprising top andbottom planar surfaces, formed of electrically insulative andmechanically protective material, at least one of said at least onemechanical protective layer being transparent to radiation, at least oneof said at least one mechanical protective layer comprising electricallyinsulative edge surfaces having pads, the pads comprising solderablecontacts extending onto at least one of the top and bottom planarsurfaces of the at least one mechanical protective layer, and at leastone of said planar surfaces of said at least one mechanical protectivelayer including an edge configuration defining a step.
 2. A packagedoptronic integrated circuit device according to claim 1 wherein saidstep is coated with an opaque coating.
 3. A packaged optronic deviceaccording to claim 1 wherein said integrated circuit die has top andbottom surfaces and said step is disposed entirely above the top surfaceof the die.
 4. A packaged optronic device according to claim 1 whereinsaid integrated circuit die has top and bottom faces, said at least onemechanical protective layer includes a top protective layer transparentto radiation overlying the top face of said integrated circuit die and abottom protective layer overlying said bottom face of said integratedcircuit die.
 5. A packaged optronic device according to claim 4 whereinsaid top protective layer has a top planar surface and said top surfaceincludes said edge configuration defining said step.
 6. A packagedoptronic device according to claim 5 wherein said bottom protectivelayer has a bottom planar surface and said solderable contacts extendonto said bottom planar surface.